Lead Principal Engineer Device Development RF-GaN (w/m/div)

Shape the future: Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover Creativity: Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms Data is everything: Optimization of device performance and reliability as well as development of required characterization methods Stakeholder management: Coordination with project management, process development, characterization, product design and customers Teamwork makes the dream work: Collaboration within an international multi-site environment Take responsibility: Advancement of RF-GaN/Si device technology development with a focus on high-performance applications Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics Work experience: You bring more than 10 years of experience in GaN device technology development Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward Skills: You possess in-depth GaN device knowledge for RF applications as well as a strong background in semiconductor physics and technology Languages: You communicate confidently in English and can present complex topics effectively We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity. Our hiring decisions are based on skills and experience. Even if you don't meet every requirement, we encourage you to apply. Please let your recruiter know if you need any accommodations during the interview process. Learn more about our various contact channels and about Diversity & Inclusion at Infineon. Franziska Mantei https://www.linkedin.com/in/franziska-m-5057582/